TNL TCAD Products
Atom to Device
Reactor Epitaxy
Realize MBE, CVD, MOCVD, PECVD reactors based Epitaxy: Family of TNL EpiGrow simulators
Material Characterization
Realize Material Characterization e.g. Band Structure, Mobility and THz Conductivity through atomistic simulation
Device Characterization
Nano Scale Dual Gate, FinFET, GAA, FDSOI, Power Devices, Lasers, LED, etc: 2D & 3D Device Simulators
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- Presenting MBE solution at 23rd International Conference on Molecular-Beam Epitaxy Matsue, Japan, 2024
- Presenting MBE solution at 38th North American Conference on Molecular Beam Epitaxy (NAMBE 2024), Boston, Massachusetts
- Presenting MOCVD/MOVPE solution at Phase Epitaxy (ICMOVPE XXI), 2024 in Las Vegas, Nevada
- Organized two day Technical Webinar on Physics of most of Semiconductor device technologies and hands on training of TNL CAD & TCAD at Chandigarh University, Chandigarh during 4-5 Sep 2023
- Successfully delivered and demonstrated Radiation Dosimetry systems to ISRO in 2022 to be included in Chandrayan Mission-III.
- IEEE webinar on Material Growth & Charaterization.
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