TNL TCAD Software

III-N Epitaxy Know more

GaAs Epitaxy Know more

FullBand Characterization Know more

Field Mobility Know more

HOT Carriers Dynamics Know more

Device Characterization Know more

Innovative TCAD Tools from Atom to Device

EPITAXIAL MATERIAL GROWTH

MBE, CVD, MOCVD, PECVD Reactors Architectures to reproduce the Experiments with Defects Detection, Growth Rate, Strain, Roughness extraction etc .

MATERIAL CHARACTERIZATION

Full electronic band structure Prediction with Extraction of various physical parameters ,

Accurate prediction of Carrier Mobility with mobility model development

Hot Carrier Dynamics with reproduction of THz Spectroscopy experiment

DEVICE CHARACTERIZATION

Particle based device I-V characterization of Nano and Conventional device nodes, transport solution with a self-consistent Wigner-Boltzmann-Poisson equations.

TNL Simulators Innovative Solutions

TNL-EpiGrow Simulator

TNL-FB Simulator

TNL-EM Simulator

TNL-TS Simulator

TNL-PD Simulator

Achieve your Technologies Demands

Epitaxial Growth

Power Devices

III-V Solar Cell

Si and SiGe Materials

UV Detector

IR Detector

Nano Devices

Radiation Detector

News

Executed NDA with Aixtron Germany for different Horizontal & Verical reactors and process modeling.

Executed NDA with Indian Defense (DRDO) for III-N Epitaxy.

Executed NDA with QuantumSemi, USA for SiGe CVD Epitaxy.

Executed NDA with SCL Mohali (Indian Government) for III-N Epitaxy.

Events

Presenting Invited talk on MOCVD Reactor based Epitaxy at IWPSD 2025 to be held at IIT Roorkee.

Tutorials and meet us at our booth at IWPSD 2025 to be held at IIT Roorkee.

Participation and preseted Family of TNL TCAD tools at SemiCon India 2023, New Delhi.

Publications

Pre-nitridation on dislocation density: MOCVD/MOVPE Epitaxy

Pre-Aluminization Effect on defects:MOCVD/MOVPE Epitaxy

FullBand Structure of AlZnO (AZO) Nanofilms

HgCdTe MBE Epitaxy

CVD Epitaxy: GAA Nanosheet FETs

Services offered

Epitaxy Modeling

Atomistic moleing of epitaxial growth process based on various reactor configurations.

Advanced node Si & compound semiconductor based devics modeling at atomistic scale

Epi-wafer & Fab

Specific and customized epi-wafers from OEMs worldwide

Device fabrication services based on foundries PDKs based on customer's specific requirements.

Others

Specific Developments of new atomistic physics based features in TCAD tools based on customer's Specific Requirements

Development of IR and Radiation detection Technology Hardware system including ASIC

Our Partners

About us

By employing cutting-edge atomistic TNL TCAD modeling software, it is now possible to accurately predict a range of physical phenomena, even though capturing these effects with advanced instruments is still not attainable.

Vision

Our Vision is to assist our clients and customers in attaining their success by navigating both current and emerging technological advancements. We aim to boast their technological progress while minimizing both time and expenses.

Mission

Our mission is to establish ourselves as the leading TCAD provider by enhancing material growth in device modeling capabilities, thereby fostering the development of sustainable, disruptive, and innovative technologies.

Connect with Us

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