TNL-TS simulator is an innovative solution based on interaction of THz photons with the electrons inside semiconductors with capabilities to reproduce THz spectroscopy experiments without using Drude or its upgraded models. To simulate the HOT carrier dynamics, the microscopic simulation tracks the motion of individual particles under the influence of the THz pulses and energy gain by each and every electron due to interaction with THz photons. The impact of internal fields of the crystal lattice and influence of other charges, lattice defects etc also play important role to decide the conductivity of material. The free carrier absorption mechanism prompts electrons to excite at higher energy lebels. In solids, such as semiconductors and metals, transport is known to be dominated by random scattering events due to impurities, lattice vibrations, etc., which randomize the momentum and energy of charge particles in time. The stochastic techniques to model these random scattering events are particularly useful in describing inter and intraband transitions of charge carriers in bulk & nanomaterials. The Boltzmann transport equation solution is carried out by exploiting Monte Carlo technique which is based on random numbers. The flexibility to initialise the carriers over many or particular valley over full band structure provide opportunity to predict the accurate picture of HOT carrier dynamics. The position, momentum, energy & other properties associated with ultrafast carrier dynamics of charged particles under infulence of THz Pulses can be extracted under the ramp of frequencies ranging from few hundred gigahertz to several terahertzs. THz Spectroscopy simulator has capabilities to simulate the microscopic conductivity of weakly confined, classical electrons in absence of depolarization effects without need of any approximations of fitting parameters to calibrate the Drude-Smith conductivities.
TNL-TS simulator provides flexibilities and powerful method to resolve and control individual carrier transitions between different many body states. THz Spectroscopy simulator helps in realization of new insights & understanding regarding many body atomistic/quantum kinetics and development of new technologies that are optimized up to the elementary quantum level.
Accurate predictions for electronic transport properties of the group IV, IV-IV, III-V and II-VI compounds with Cubic, Zincblende & Wurtzite phase and 2d materials. TNL-TS simulator provide opportunity to model conductivity beyond the Drude model over few valleys or on the full electronic band structure obtained through TNL-FB simulator. The electron-phonon, electron-impurity, and electron-electron scattering mechanisms consistent with the full band structure of the solid, thus accounting for density-of-states and matrix-element effects more accurately. The impact of various types scatterings responsible for mobility degradration are use to calibrate the experimental findings.
An unmatched atomistic technique strongly dependent on the applied peak THz feld strength to successfully demonstrate the ultrafast carrier dynamics in semiconductors. The free carrier absorption is limited only to intrinsic free carriers. The feld strength i.e. increases beyond the threshold value, a material specific property, inbuilt to track the impact ionization mechanism impact which adds more free carriers and Coulomb scattering dominates over the other scattering mechanisms.
With innovative capabilities of TNL-TS simulator, which is use to analyze free carrier absorption and HOT carrier dynamics with extraction of several important parameters which are impossible to extract with sophisticted instruments. The extracted valley population density provides the carrier excitation and de-excitaion information.
