TNL-PECVD simulator helps in modeling and diagnostics of low-pressure radio-frequency discharges and the plasma power variation due to that the dissociation of the precursors occurs. The impact of RF frequencies on the chemical, physical and electrical properties of the deposited film as well as the growth rate and conformity of the low temperature CVD process may easily reproduce over the TNL-PECVD simulator. The optimization of dissociation rate of a given precursor, pressure, plasma frequency and power can be done effortlessly.
The arrival of precursors atoms or molecules form due to gas phase chemical kinetics at the substrate surface prompts a number of processes. initially the atoms weakly bound to the surface by van der Waals forces, treated as physiosorbed, whereas those bound to the substrate by stronger chemical bonds are treated as chemisorbed. To become incorporated into the lattice, an atom must become chemisorbed at an epitaxial site and form bulk-like bonding configurations. The rate at which this occurs is defined through incorporation rate. Atoms and molecules have flexibilities to migrate across the surface, desorb back into the vacuum, or migrate into the crystal itself. Reactions between adatoms can occur as well, and this can be a crucial stage for breaking up large molecules.
With innovative capabilities and reliability shown by TNL-PECVD simulator, we may assure our costomers to reproduce the PECVD reactor deposition processes in similar manner as with real reactor along with deeper informations which are unavailable with any sophisticted characterization instruments.
