TNL-EM Simulator is powerful tool is capable to simulate carriers transport on few valleys or full electronic band structure. The microscopic simulation takes into consideration of the motion of individual particles in the presence of the forces acting on them due to external fields as well as the internal fields of the crystal lattice and other charges in the system. In solids, such as semiconductors and metals, transport is known to be dominated by random scattering events due to intrinsic scattering mechanisms e.g. acoustic & intervalley and extrinsic scattering mechanisms e.g. impurities, defect etc., which randomize the momentum and energy of each charge particles in time. Hence, stochastic techniques to model these random scattering events are particularly useful in describing transport in semiconductors, in particular through the Monte Carlo method without any initial assumptions. TNL-EM simulator provides flexibility to users to initialise the carriers over full energy band or on few valleys and analyse the transportation study of carrier to simulate the ensemble velocity of carriers under external electromagnetic forces.
The TNL-EM simulator is physics based simulator solves the Boltzmann transport equation coupled with various non-linear scattering mechanisms and simulate the electronic transport in nano-crystalline thin film & bulk semiconductor materials. TNL-EM simulator is "state-of-the-art" simulator which uses the Monte Carlo technique for solution carrier dynamics under non-equilibrium transport conditions.
Accurate predictions for electronic transport properties of the group IV, IV-IV, III-V and II-VI compounds with Cubic, Zincblende & Wurtzite phase and 2d materials. TNL-EM simulator provide opportunity to model carrier mobility beyond the effective-mass approximation over few valleys or on the full electronic band structure obtained through TNL-FB simulator. The electron-phonon, electron-impurity, and electron-electron scattering mechanisms consistent with the full band structure of the solid, thus accounting for density-of-states and matrix-element effects more accurately. The impact of various types scatterings responsible for mobility degradration are use to calibrate the experimental findings.
With innovative capabilities of TNL-EM simulator, which is use to analyze carrier field mobility with extraction of several important parameters impossible to extract sophisticted instrument. The extracted valley population density provides the reason of mobility degradation and justify Negative Diffential Mobility effect.
