TNL-CVD simulator helps in expediting the CVD reactor based deposition processes for better understanding of underneath issues at atomistic scale with the inclusion of real CVD reactor geometries gas- and surface-phase chemical kinetics. The kMC algorthims which are based on RAMDOMNESS, handles the adsorption, diffusion and desorption phenomenon to replicate real time deposition experiments in similar manners without use of any continuum model or partial differential equations.
The arrival of precursors atoms or molecules form due to gas phase chemical kinetics at the substrate surface prompts a number of processes. initially the atoms weakly bound to the surface by van der Waals forces, treated as physiosorbed, whereas those bound to the substrate by stronger chemical bonds are treated as chemisorbed. To become incorporated into the lattice, an atom must become chemisorbed at an epitaxial site and form bulk-like bonding configurations. The rate at which this occurs is defined through incorporation rate. Atoms and molecules have flexibilities to migrate across the surface, desorb back into the vacuum, or migrate into the crystal itself. Reactions between adatoms can occur as well, and this can be a crucial stage for breaking up large molecules.
With innovative capabilities and reliability shown by TNL-CVD simulator, we may assure our costomers to reproduce the CVD reactor processes epitaxy growth in similar environment along with deeper informations which are unavailable with any sophisticted characterization instrument.
