MOCVD Epitaxy Processes
The metal organic chemical vapor deposition (MOCVD) process, the reactant gases are combined at elevated temperatures in the reactor to cause a chemical interaction, resulting in the deposition of materials on the substrate. A reactor is a chamber made of a material that does not react with the chemicals being used.
Two MOCVD reactors geometery architectures are inbuild in TNL-MOCVD configurations. Horizontal flow of precursor gases is termed as Injector (equivalent to AIXTRON AIX200/4 horizontal MOCVD reactor), whereas vertical flow of precursors through showerhead plate (equivalent to AIXTRON CCS showerhead MOCVD reactor) is termed as Showerhear reactor. Both TNL-MOCVD reactors software can help to realize the deep insight with atomistic scale solution and the proper understanding of the microscopic isues and challenges associated with these reactors based epitaxial growth processes.
To reduce the development cost, time and manpower consumption & to cater semiconductor material industry needs, TNL Epitaxial Material Growth Computer-Aided Design tools will be useful and provide flexibilities to run design of experiments (DOE) to achieve optimum conditions and high quality film with real reactor’s geometries and various other input conditions.