In TNL-Shwrhead simulator, showerhead MOCVD reactor condition is applied through a perforated or porous planar surface which use to dispense reactant gases more-or-less uniformly over a second parallel planar surface.Vertical flow of precursors through a plate containing porous holes drives precursors in form of showers.
TNL-Shwrhead simulator's configuration can be used for batch processing multiple substrates, but also lends itself to processing single round wafers. The proper understanding of the process of showerhead MOCVD film to extract growth at atomistic scale. It is use to optimize of various input physical parameters and provide a reference for the structural design of reactors
The data base for various precursors’ gases and the carrier gases with their chemical reaction rates as described in the chemical kinetics section are available in the TNL-Shwrhead simulator. The complicated chemical mechanisms are simplified through rate of production (ROP) analysis for optimization of chemical reaction mechanisms enabling the accurate prediction of growth rates and defect density qualitatively & quantitatively.
Users have flexibilities to use their own gas-phase and surface-phase reactions,
Reactor processes are dependent on the molecular flux interacting with the substrate surface,
Physisorption in which sticking event follows a thermal or barrier less reaction model,
Diffusion time calculated by the definition of the diffusion length,
Boundary layer thickness δ is independent of the radial position,
Residence time, the time that a particle or a precursor gas molecule has spent in the stream,
Residence time is roughly linear in the ceiling height Hc ,
Descending steps in form of Schwoebel-Ehrlich barrier and ascending steps in form of incorporation barrier,
Mass transport is dominated by convection or by diffusion
Diffusion length (Ld) is dependent on the mass diffusivity (D)