FullBand simulator uses Emperical Pseudopotential method (EPM), involves the fitting of the atomic form factors to experiment. The main feature of Full Energy Band simulator is to analyze the electronic band structures of zinc blende and wurtzite materials using the empirical pseudopotential method, with the form factors adjusted to reproduce correctly the most important band features. Relevant energy spacings as well as direct and indirect band gaps nature can also be derived from the band structures. The electron effective masses, DOS at high symmetry points can be obtained using Full Energy Band simulator.
Pseudopotetial Method with Virtual crystal approximation (VCA) and alloy disorder contribution
Impact of thin/thick film thickness and Effect of wafer orientation on bandgap energy
Users input lattice constant with bunches of inbuilt examples for cubic, ZB and WZ materials
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FullBand simulator is powerful tool to extract electronic full band structure by inputting ONLY lattice constant (XRD obtained or simulated)
Empirical Pseudopotential Method (EPM) provide flexibilities for direct fit of the V(G)'s to the experimental band structure
Electronic band structure can accurately predict electronic properties and work as a source of factual information about semiconductors
Electronic band structure is calculated by solution of one electron Schrodinger wave equation, which makes empirical pseudopotential approach computationally much cheaper than ab-initio methods
FullBand Simulator, helps in better understanding of the structural and
electronic properties
Band structures, carrier effective mass, electronic densities of states, and valence charge densities etc can be extracted
FullBand Simulator calibrated against Experimental and ab-initio based electronic band structures
Flexibities to Accomodate USER lattice parameters in FullBand Simulator
FullBand Simulator offer COST ECONOMICAL SOLUTION for thin/thick film full electronic structure
Graphical User Interface (GUI) based Simulator
Binary (GaN, GaAs etc.) and ternary (AlGaN, InGaAs etc.)
Users input lattice constant
Full Electronic Energy Band
Extraction of Velocity of carriers in different energy states
Extraction of Effective Mass of carriers
Parabolic & Nonparabolic bands effects
Density of state (DOS) calculation
Ability to deal with different cubic, Zincblende & Wurtzite alloys
Carrier's position & energy on different Energy levels in full band