TNL-TS (THz Spectroscopy) Simulator is powerful tool to simulates motion of charged and interacting particles. The microscopic simulation of the motion of individual particles under the influence of the THz pulse as well as the internal fields of the crystal lattice and influence of other charges, lattice defects etc. In solids, such as semiconductors and metals, transport is known to be dominated by random scattering events due to impurities, lattice vibrations, etc., which randomize the momentum and energy of charge particles in time. The stochastic techniques to model these random scattering events are particularly useful in describing inter and intraband transitions of charge carriers in bulk & nanomaterials. The Monte Carlo technique use for solution of Boltzmann transport equation provides flexibility to users to initialise the carriers over many or particular band of the material and analyse the position, momentum, energy & other properties associated with motion of charged particles under infulence of THz Pulses, frequencies ranging from few hundred gigahertz to several terahertzs. THz Spectroscopy simulator has capabilities to simulate the microscopic conductivity of weakly confined, classical electrons in absence of depolarization effects without need of any approximations of fitting parameters to calibrate the Drude-Smith conductivities..
TNL Terahertz (THz) Spectrocsopy simulator is the unmatched simulator, which can be used for detection & controling the material properties under the influence of electromagnetic fields with frequencies ranges from few hundred giahertz to several terahertz. THz spectroscopy simulator provides flexibilities and powerful method in resolving and controlling individual carrier transitions between different many body states. THz Spectroscopy simulator provides help in new insights & understanding about many body atomistic/quantum kinetics and development of new technologies that are optimized up to the elementary quantum level.
THz Spectroscopy simulator is valuable tool for studying charge carrier transport in Bulk and nanomaterials
In THz Spectroscopy simulator, THz pulse is use as ultrafast probe of inter & intraband excitations in nanoparticle ensembles and provide unique information for next generation nanomaterial engineering
It is capable to extract THz conductivities and absorption for variety of semiconductors thin and thick films along with carrier population inversion details including various scattering mechanisms
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Graphical User Interface (GUI) based simulator i.e. no need for coding & scripting
User Friendly with Windows based application with full capabilities
Powerful tool to simulates motion of charged, and interacting particles
Microscopic simulation of the motion of individual particles under the influence of the THz pulse as well as the internal fields of the crystal lattice and influence of other charges, lattice defects etc
Include various non-linear scattering mechanisms to calibrate the real time THz experiments
Fermi Golden Rule for momentum & energy conservation
Random scattering events, particularly useful in describing inter and intraband transitions of charge carriers in bulk & nanomaterials
Flexibility for users to initialise the carriers distribution over many valleys or lowest energy lying valley of the material
Beauty of simulator, it follows Afbau principle i.e. under static field most of high energy valley carriers tranfer to lowest energy lying valley
THz Pulses applications with frequencies ranging from few hundred gigahertz to several terahertzs
Users may trace all the carrier electronic dynamics associated with influence of THz pulses on motion for each single electron
Bunches of examples inbuilt with flexibilities to accomodate USERS defined materials & parameters easily
TNL-TS simulator offer COST ECONOMICAL SOLUTION for calibration of THz spectroscopy experiments of nano and bulk materials
User Friendly with Graphical User Interface (GUI) capabilities on windows platform
Fast and efficient algorithms with variety of material database with flexibilites to ramp USERS define THz frequencies
Users may track all the run outputs i.e. position, momentum, energy, valley occupation etc parameters during simulation running environment
Purely atomistic physics based modeling capabilities
Elemental, binary and ternary compound semiconductors database available
Ability to controlling & optimizing individual carrier transitions between different intrabands in many body states
Extraction of the THz conductivities and absorption along with other associated parameters
Various INBUILT scattering mechanisms used for calibration of experimental findings
To avoid the transient effects that accompany the turnon of the electric field, all time steps prior to a total elapsed time can be discarded
State of Art tool for accurately prediction of the conductivity of a weakly confined Drude gas of electrons without any initial assumptions