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MBE Epitaxy Solution of the Quantum Well Heterostructure: Atomistic TNL-EpiGrow Simulator .
*new
Defect Analysis of MBE Reactor Grown HgCdTe on Si, GaAs, GaSb, CZT Substrates Through TNL-EPIGROW Simulator.
*new
MOCVD/MOVPE Epitaxy Solution of Group III-V Nitride with Atomistic Prospective and Cost Effectiveness
*new
Epitaxy of III-V Nitrides with Strain Relief Layers Analysis— TNL EpiGrow Simulator
*new
An Atomistic insights for Predictive In-Silico Chemical Vapor Deposition
*new
Dislocations/Defects analysis in III-V nitrides - a cost effective MOCVD epitaxy solution
*new
DEFECT ANALYSIS OF MBE REACTOR GROWN HgCdTe ON GaAs, GaSb, CZT SUBSTRATES THROUGH TNL-EPIGROW SIMULATOR.
IMPACT OF VARIOUS DEFECTS ON CARRIER MOBILITY IN ZnO THIN FILMS.
FULL ELECTRONIC BAND STRUCTURE CHARACTERIZATION of ZnO NANOROD .
Nonlinear Ultrafast carrier’s dynamics with scattering rate saturation in Ge thinfilms.
An Innovative Model for Electronic Band Structure Analysis of Doped and Un-Doped ZnO.
An innovative technique for electronic transport model of group-III nitrides.
Numerical simulation of InxGa1-xAs/InP PIN photodetector for optimum performance at 298 K.
HEMT growth to Device
: Advances in Electrical Control and Signal Systems, Chapter 61, ISBN No. -9789811552618, 2020.
"Full Electronic Band Structure Analysis of Cd Doped ZnO Thin Films Deposited by SOL-GEL SPIN COATING METHOD ".
"An innovative approach for controlled epitaxial growth of GaAs in real MOCVD reactor environment".
"Infrared Phototectors: Some techniques for Modeling & Simulation, 2018.
Numerical Study of Dual band (MW/LW) IR Detector for Performance Improvement, Defense Science journal, Vol 67, No 2, pp. 141-148, 2017.
EpiGrow Simulator Technical details.
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Semiconductor Materials Mobility Characterization Tutorial
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Monte Carlo Particle Device Simulator PPT
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