The basic objectives of modeling and optimization services offered to Indian Defence (DRDO) are to reduce dark current upto a certain extent and enhance the photocurrent associated with p-i-n structure based infrared (IR) detector for night vision applications. The rigorous simulation study of p-i-n structure is carried out by performing design of experiments (DOE) through varying the following parameters ;
The other aspect to study the impact of various passivants over the device structure to achieve minimum dark current due to surface recombination centers generated and to optimize the ;
The successful calibration of experiments have been perfomed and deliverables are successfully transfer to DRDO, the InGaAs on InP based p-i-n Photodetector technology for IR applications is in production. The partial results may be found from below link;.